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FDC021N30

FDC021N30

For Reference Only

Part Number FDC021N30
PNEDA Part # FDC021N30
Description PT8 N 30V/20V, MOSFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDC021N30 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDC021N30
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDC021N30, FDC021N30 Datasheet (Total Pages: 10, Size: 505.61 KB)
PDFFDC021N30 Datasheet Cover
FDC021N30 Datasheet Page 2 FDC021N30 Datasheet Page 3 FDC021N30 Datasheet Page 4 FDC021N30 Datasheet Page 5 FDC021N30 Datasheet Page 6 FDC021N30 Datasheet Page 7 FDC021N30 Datasheet Page 8 FDC021N30 Datasheet Page 9 FDC021N30 Datasheet Page 10

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FDC021N30 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds710pF @ 15V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

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