Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDB8832-F085

FDB8832-F085

For Reference Only

Part Number FDB8832-F085
PNEDA Part # FDB8832-F085
Description MOSFET N-CH 30V 34A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB8832-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB8832-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDB8832-F085 Datasheet
  • where to find FDB8832-F085
  • ON Semiconductor

  • ON Semiconductor FDB8832-F085
  • FDB8832-F085 PDF Datasheet
  • FDB8832-F085 Stock

  • FDB8832-F085 Pinout
  • Datasheet FDB8832-F085
  • FDB8832-F085 Supplier

  • ON Semiconductor Distributor
  • FDB8832-F085 Price
  • FDB8832-F085 Distributor

FDB8832-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs265nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11400pF @ 15V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

DMT10H015SK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IPL60R210P6AUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

19.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

210mOhm @ 7.6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1750pF @ 100V

FET Feature

-

Power Dissipation (Max)

151W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-VSON-4

Package / Case

4-PowerTSFN

STL86N3LLH6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ H6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2030pF @ 25V

FET Feature

-

Power Dissipation (Max)

4W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

SI7703EDN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

48mOhm @ 6.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 800µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

HUFA76432S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 59A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1765pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

ULN2804A

ULN2804A

STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

STM32F030R8T6TR

STM32F030R8T6TR

STMicroelectronics

IC MCU 32BIT 64KB FLASH 64LQFP

PVG612ASPBF

PVG612ASPBF

Infineon Technologies

SSR RELAY SPST-NO 2A 0-60V

SMBJ10A

SMBJ10A

Taiwan Semiconductor Corporation

TVS DIODE 10V 17V DO214AA

MT41K512M16HA-125:A

MT41K512M16HA-125:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 96FBGA

M29W200BB70N1

M29W200BB70N1

Micron Technology Inc.

IC FLASH 2M PARALLEL 48TSOP

ADP125ARHZ-R7

ADP125ARHZ-R7

Analog Devices

IC REG LIN POS ADJ 500MA 8MSOP

ZUS252412

ZUS252412

Cosel

DC DC CONVERTER 12V

AT45DB321D-SU

AT45DB321D-SU

Adesto Technologies

IC FLASH 32M SPI 66MHZ 8SOIC

MC9S12HZ256VAL

MC9S12HZ256VAL

NXP

IC MCU 16BIT 256KB FLASH 112LQFP

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN

NTJD5121NT1G

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363