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FDB86102LZ

FDB86102LZ

For Reference Only

Part Number FDB86102LZ
PNEDA Part # FDB86102LZ
Description MOSFET N-CH 100V 30A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB86102LZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB86102LZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB86102LZ, FDB86102LZ Datasheet (Total Pages: 8, Size: 353.53 KB)
PDFFDB86102LZ Datasheet Cover
FDB86102LZ Datasheet Page 2 FDB86102LZ Datasheet Page 3 FDB86102LZ Datasheet Page 4 FDB86102LZ Datasheet Page 5 FDB86102LZ Datasheet Page 6 FDB86102LZ Datasheet Page 7 FDB86102LZ Datasheet Page 8

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FDB86102LZ Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8.3A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs24mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1275pF @ 50V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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