FDB8132_F085
For Reference Only
| Part Number | FDB8132_F085 |
| PNEDA Part # | FDB8132_F085 |
| Description | MOSFET N-CH 30V 80A D2PAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,678 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDB8132_F085 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDB8132_F085 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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FDB8132_F085 Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101, PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 13V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14100pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Microsemi Corporation Series POWER MOS 7® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 14A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5185pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package ISOTOP® Package / Case SOT-227-4, miniBLOC |
