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FDB6670AS

FDB6670AS

For Reference Only

Part Number FDB6670AS
PNEDA Part # FDB6670AS
Description MOSFET N-CH 30V 62A TO-263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB6670AS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB6670AS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB6670AS, FDB6670AS Datasheet (Total Pages: 7, Size: 784.85 KB)
PDFFDB6670AS Datasheet Cover
FDB6670AS Datasheet Page 2 FDB6670AS Datasheet Page 3 FDB6670AS Datasheet Page 4 FDB6670AS Datasheet Page 5 FDB6670AS Datasheet Page 6 FDB6670AS Datasheet Page 7

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FDB6670AS Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C62A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 15V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 15V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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