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FDB3652

FDB3652

For Reference Only

Part Number FDB3652
PNEDA Part # FDB3652
Description MOSFET N-CH 100V 61A TO-263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB3652 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB3652
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB3652, FDB3652 Datasheet (Total Pages: 15, Size: 765.03 KB)
PDFFDB3652 Datasheet Cover
FDB3652 Datasheet Page 2 FDB3652 Datasheet Page 3 FDB3652 Datasheet Page 4 FDB3652 Datasheet Page 5 FDB3652 Datasheet Page 6 FDB3652 Datasheet Page 7 FDB3652 Datasheet Page 8 FDB3652 Datasheet Page 9 FDB3652 Datasheet Page 10 FDB3652 Datasheet Page 11

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FDB3652 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2880pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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