FDB14N30TM
For Reference Only
| Part Number | FDB14N30TM |
| PNEDA Part # | FDB14N30TM |
| Description | MOSFET N-CH 300V 14A D2PAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,904 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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FDB14N30TM Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDB14N30TM |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FDB14N30TM Specifications
| Manufacturer | ON Semiconductor |
| Series | UniFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.6mOhm @ 90A, 10V Vgs(th) (Max) @ Id 2.2V @ 60µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 8180pF @ 25V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
