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FDA20N50-F109

FDA20N50-F109

For Reference Only

Part Number FDA20N50-F109
PNEDA Part # FDA20N50-F109
Description MOSFET N-CH 500V 22A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDA20N50-F109 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDA20N50-F109
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDA20N50-F109, FDA20N50-F109 Datasheet (Total Pages: 8, Size: 1,688.59 KB)
PDFFDA20N50-F109 Datasheet Cover
FDA20N50-F109 Datasheet Page 2 FDA20N50-F109 Datasheet Page 3 FDA20N50-F109 Datasheet Page 4 FDA20N50-F109 Datasheet Page 5 FDA20N50-F109 Datasheet Page 6 FDA20N50-F109 Datasheet Page 7 FDA20N50-F109 Datasheet Page 8

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FDA20N50-F109 Specifications

ManufacturerON Semiconductor
SeriesUniFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs230mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs59.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3120pF @ 25V
FET Feature-
Power Dissipation (Max)280W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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