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FCU600N65S3R0

FCU600N65S3R0

For Reference Only

Part Number FCU600N65S3R0
PNEDA Part # FCU600N65S3R0
Description SUPERFET3 650V IPAK PKG
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 16,032
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCU600N65S3R0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCU600N65S3R0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCU600N65S3R0, FCU600N65S3R0 Datasheet (Total Pages: 10, Size: 288.65 KB)
PDFFCU600N65S3R0 Datasheet Cover
FCU600N65S3R0 Datasheet Page 2 FCU600N65S3R0 Datasheet Page 3 FCU600N65S3R0 Datasheet Page 4 FCU600N65S3R0 Datasheet Page 5 FCU600N65S3R0 Datasheet Page 6 FCU600N65S3R0 Datasheet Page 7 FCU600N65S3R0 Datasheet Page 8 FCU600N65S3R0 Datasheet Page 9 FCU600N65S3R0 Datasheet Page 10

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FCU600N65S3R0 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds465pF @ 400V
FET Feature-
Power Dissipation (Max)54W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Stub Leads, IPak

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