Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FCPF260N60E-F152

FCPF260N60E-F152

For Reference Only

Part Number FCPF260N60E-F152
PNEDA Part # FCPF260N60E-F152
Description MOSFET N CH 600V 15A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,790
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCPF260N60E-F152 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCPF260N60E-F152
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCPF260N60E-F152, FCPF260N60E-F152 Datasheet (Total Pages: 11, Size: 834.02 KB)
PDFFCPF260N60E-F152 Datasheet Cover
FCPF260N60E-F152 Datasheet Page 2 FCPF260N60E-F152 Datasheet Page 3 FCPF260N60E-F152 Datasheet Page 4 FCPF260N60E-F152 Datasheet Page 5 FCPF260N60E-F152 Datasheet Page 6 FCPF260N60E-F152 Datasheet Page 7 FCPF260N60E-F152 Datasheet Page 8 FCPF260N60E-F152 Datasheet Page 9 FCPF260N60E-F152 Datasheet Page 10 FCPF260N60E-F152 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FCPF260N60E-F152 Datasheet
  • where to find FCPF260N60E-F152
  • ON Semiconductor

  • ON Semiconductor FCPF260N60E-F152
  • FCPF260N60E-F152 PDF Datasheet
  • FCPF260N60E-F152 Stock

  • FCPF260N60E-F152 Pinout
  • Datasheet FCPF260N60E-F152
  • FCPF260N60E-F152 Supplier

  • ON Semiconductor Distributor
  • FCPF260N60E-F152 Price
  • FCPF260N60E-F152 Distributor

FCPF260N60E-F152 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs260mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 25V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

SIS862DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1320pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

IRLR3715ZTRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

810pF @ 10V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7700pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

AON7140

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3350pF @ 20V

FET Feature

-

Power Dissipation (Max)

46W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN-EP (3.3x3.3)

Package / Case

8-PowerWDFN

FDT439N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 6.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA

Recently Sold

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

TZMC15-GS08

TZMC15-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 500MW SOD80

SI4836DY-T1-E3

SI4836DY-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

TAJE107M025RNJ

TAJE107M025RNJ

CAP TANT 100UF 20% 25V 2917

EPM7128STC100-15N

EPM7128STC100-15N

Intel

IC CPLD 128MC 15NS 100TQFP

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

ESDA6V1L

ESDA6V1L

STMicroelectronics

TVS DIODE 5.25V SOT23-3

S2B-13-F

S2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1.5A SMB

PMEG4010EH,115

PMEG4010EH,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD123F

AD780ARZ-REEL7

AD780ARZ-REEL7

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC

MAX17048G+T10

MAX17048G+T10

Maxim Integrated

IC FUEL GAUGE LI-ION 1CELL 8TDFN

SI4410DYPBF

SI4410DYPBF

Infineon Technologies

MOSFET N-CH 30V 10A 8-SOIC