Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FCPF190N65S3R0L

FCPF190N65S3R0L

For Reference Only

Part Number FCPF190N65S3R0L
PNEDA Part # FCPF190N65S3R0L
Description SUPERFET3 650V TO220F PKG
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 23,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCPF190N65S3R0L Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCPF190N65S3R0L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCPF190N65S3R0L, FCPF190N65S3R0L Datasheet (Total Pages: 10, Size: 378.73 KB)
PDFFCPF190N65S3R0L Datasheet Cover
FCPF190N65S3R0L Datasheet Page 2 FCPF190N65S3R0L Datasheet Page 3 FCPF190N65S3R0L Datasheet Page 4 FCPF190N65S3R0L Datasheet Page 5 FCPF190N65S3R0L Datasheet Page 6 FCPF190N65S3R0L Datasheet Page 7 FCPF190N65S3R0L Datasheet Page 8 FCPF190N65S3R0L Datasheet Page 9 FCPF190N65S3R0L Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FCPF190N65S3R0L Datasheet
  • where to find FCPF190N65S3R0L
  • ON Semiconductor

  • ON Semiconductor FCPF190N65S3R0L
  • FCPF190N65S3R0L PDF Datasheet
  • FCPF190N65S3R0L Stock

  • FCPF190N65S3R0L Pinout
  • Datasheet FCPF190N65S3R0L
  • FCPF190N65S3R0L Supplier

  • ON Semiconductor Distributor
  • FCPF190N65S3R0L Price
  • FCPF190N65S3R0L Distributor

FCPF190N65S3R0L Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 400V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

SI8405DB-T1-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

55mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.47W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA, CSPBGA

AOT7S65L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

434pF @ 100V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

SPI11N65C3HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

85.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5082pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP180N10N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 50V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

TS922IDT

TS922IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

MBR0580-TP

MBR0580-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 500MA SOD123

MPQ7053

MPQ7053

Central Semiconductor Corp

TRANS 2NPN/2PNP 250V 0.5A

BLM18KG121TN1D

BLM18KG121TN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

DEA1X3D470JN2A

DEA1X3D470JN2A

Murata

CAP CER 47PF 2KV SL RADIAL

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

USB4604-1080HN

USB4604-1080HN

Microchip Technology

IC USB HUB/FLASH CTLR 48QFN

LT1963AES8#TRPBF

LT1963AES8#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.5A 8SOIC

LAN8740AI-EN

LAN8740AI-EN

Microchip Technology

IC TRANSCEIVER FULL 1/1 32SQFN

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

T520V337M2R5ATE025

T520V337M2R5ATE025

KEMET

CAP TANT POLY 330UF 2.5V 2917

SML-D12U8WT86

SML-D12U8WT86

Rohm Semiconductor

LED RED DIFFUSED 0603 SMD