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FCP7N60_F080

FCP7N60_F080

For Reference Only

Part Number FCP7N60_F080
PNEDA Part # FCP7N60_F080
Description MOSFET N-CH 600V 7A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,734
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP7N60_F080 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP7N60_F080
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP7N60_F080, FCP7N60_F080 Datasheet (Total Pages: 12, Size: 585.94 KB)
PDFFCP7N60_F080 Datasheet Cover
FCP7N60_F080 Datasheet Page 2 FCP7N60_F080 Datasheet Page 3 FCP7N60_F080 Datasheet Page 4 FCP7N60_F080 Datasheet Page 5 FCP7N60_F080 Datasheet Page 6 FCP7N60_F080 Datasheet Page 7 FCP7N60_F080 Datasheet Page 8 FCP7N60_F080 Datasheet Page 9 FCP7N60_F080 Datasheet Page 10 FCP7N60_F080 Datasheet Page 11

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FCP7N60_F080 Specifications

ManufacturerON Semiconductor
SeriesSuperFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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