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FCP260N65S3

FCP260N65S3

For Reference Only

Part Number FCP260N65S3
PNEDA Part # FCP260N65S3
Description MOSFET N-CH 650V 260MOHM TO220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP260N65S3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP260N65S3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP260N65S3, FCP260N65S3 Datasheet (Total Pages: 10, Size: 356.73 KB)
PDFFCP260N65S3 Datasheet Cover
FCP260N65S3 Datasheet Page 2 FCP260N65S3 Datasheet Page 3 FCP260N65S3 Datasheet Page 4 FCP260N65S3 Datasheet Page 5 FCP260N65S3 Datasheet Page 6 FCP260N65S3 Datasheet Page 7 FCP260N65S3 Datasheet Page 8 FCP260N65S3 Datasheet Page 9 FCP260N65S3 Datasheet Page 10

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FCP260N65S3 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs260mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1010pF @ 400V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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