Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FCP165N65S3R0

FCP165N65S3R0

For Reference Only

Part Number FCP165N65S3R0
PNEDA Part # FCP165N65S3R0
Description SUPERFET3 650V TO220 PKG
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,996
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Oct 20 - Oct 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP165N65S3R0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP165N65S3R0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP165N65S3R0, FCP165N65S3R0 Datasheet (Total Pages: 10, Size: 385.33 KB)
PDFFCP165N65S3R0 Datasheet Cover
FCP165N65S3R0 Datasheet Page 2 FCP165N65S3R0 Datasheet Page 3 FCP165N65S3R0 Datasheet Page 4 FCP165N65S3R0 Datasheet Page 5 FCP165N65S3R0 Datasheet Page 6 FCP165N65S3R0 Datasheet Page 7 FCP165N65S3R0 Datasheet Page 8 FCP165N65S3R0 Datasheet Page 9 FCP165N65S3R0 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FCP165N65S3R0 Datasheet
  • where to find FCP165N65S3R0
  • ON Semiconductor

  • ON Semiconductor FCP165N65S3R0
  • FCP165N65S3R0 PDF Datasheet
  • FCP165N65S3R0 Stock

  • FCP165N65S3R0 Pinout
  • Datasheet FCP165N65S3R0
  • FCP165N65S3R0 Supplier

  • ON Semiconductor Distributor
  • FCP165N65S3R0 Price
  • FCP165N65S3R0 Distributor

FCP165N65S3R0 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 400V
FET Feature-
Power Dissipation (Max)154W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

The Products You May Be Interested In

STW23NM50N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1330pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

NDP4060

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

2SK1119(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.8Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

TK8A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1050pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

NTD65N03RT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta), 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

687ALG025MGBJ

687ALG025MGBJ

Illinois Capacitor

CAP ALUM POLY 680UF 20% 25V T/H

UC3843BD1013TR

UC3843BD1013TR

STMicroelectronics

IC REG CTRLR BOOST/FLYBACK 8SOIC

STM32F103RCT6

STM32F103RCT6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 64LQFP

5CEFA4U19C8N

5CEFA4U19C8N

Intel

IC FPGA 224 I/O 484UBGA

ATMEGA168PA-MUR

ATMEGA168PA-MUR

Microchip Technology

IC MCU 8BIT 16KB FLASH 32VQFN

XC6SLX9-2TQG144C

XC6SLX9-2TQG144C

Xilinx

IC FPGA 102 I/O 144TQFP

DLW5BTN501SQ2L

DLW5BTN501SQ2L

Murata

CMC 4A 2LN 500 OHM SMD

LTST-C190KRKT

LTST-C190KRKT

Lite-On Inc.

LED RED CLEAR CHIP SMD

SI4368DY-T1-E3

SI4368DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

AD7768BSTZ

AD7768BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

HCS3920FTL500

HCS3920FTL500

Stackpole Electronics

RES 500 UOHM 1% 5W 3920

PMV65XP,215

PMV65XP,215

Nexperia

MOSFET P-CH 20V 2.8A SOT-23