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FCH190N65F-F085

FCH190N65F-F085

For Reference Only

Part Number FCH190N65F-F085
PNEDA Part # FCH190N65F-F085
Description MOSFET N-CH 650V 20.6A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,064
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCH190N65F-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCH190N65F-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCH190N65F-F085, FCH190N65F-F085 Datasheet (Total Pages: 10, Size: 415.49 KB)
PDFFCH190N65F-F085 Datasheet Cover
FCH190N65F-F085 Datasheet Page 2 FCH190N65F-F085 Datasheet Page 3 FCH190N65F-F085 Datasheet Page 4 FCH190N65F-F085 Datasheet Page 5 FCH190N65F-F085 Datasheet Page 6 FCH190N65F-F085 Datasheet Page 7 FCH190N65F-F085 Datasheet Page 8 FCH190N65F-F085 Datasheet Page 9 FCH190N65F-F085 Datasheet Page 10

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FCH190N65F-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, SuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 27A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3181pF @ 25V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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