Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FCD3400N80Z

FCD3400N80Z

For Reference Only

Part Number FCD3400N80Z
PNEDA Part # FCD3400N80Z
Description MOSFET N-CH 800V 2A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,272
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCD3400N80Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCD3400N80Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCD3400N80Z, FCD3400N80Z Datasheet (Total Pages: 11, Size: 846.62 KB)
PDFFCU3400N80Z Datasheet Cover
FCU3400N80Z Datasheet Page 2 FCU3400N80Z Datasheet Page 3 FCU3400N80Z Datasheet Page 4 FCU3400N80Z Datasheet Page 5 FCU3400N80Z Datasheet Page 6 FCU3400N80Z Datasheet Page 7 FCU3400N80Z Datasheet Page 8 FCU3400N80Z Datasheet Page 9 FCU3400N80Z Datasheet Page 10 FCU3400N80Z Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FCD3400N80Z Datasheet
  • where to find FCD3400N80Z
  • ON Semiconductor

  • ON Semiconductor FCD3400N80Z
  • FCD3400N80Z PDF Datasheet
  • FCD3400N80Z Stock

  • FCD3400N80Z Pinout
  • Datasheet FCD3400N80Z
  • FCD3400N80Z Supplier

  • ON Semiconductor Distributor
  • FCD3400N80Z Price
  • FCD3400N80Z Distributor

FCD3400N80Z Specifications

ManufacturerON Semiconductor
SeriesSuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs9.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 100V
FET Feature-
Power Dissipation (Max)32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

SI4866DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 17A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

SIHP22N60S-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

190mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

2810pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

APT18M80B

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

530mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3760pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268 (IXFT)

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

TK30E06N1,S1X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

43A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1050pF @ 30V

FET Feature

-

Power Dissipation (Max)

53W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD

LQH43CN100K03L

LQH43CN100K03L

Murata

FIXED IND 10UH 650MA 240 MOHM

PA0277NL

PA0277NL

Pulse Electronics Power

FIXED IND 700NH 10.7A 95 MOHM

LIS35DE

LIS35DE

STMicroelectronics

ACCEL 2.3-9.2G I2C/SPI 14LGA

EMZA250ADA101MF80G

EMZA250ADA101MF80G

United Chemi-Con

CAP ALUM 100UF 20% 25V SMD

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

250R05L0R4AV4T

250R05L0R4AV4T

Johanson Technology

CAP CER 0.4PF 25V C0G/NP0 0201

WSL2512R0250FEA

WSL2512R0250FEA

Vishay Dale

RES 0.025 OHM 1% 1W 2512

AD9745BCPZRL

AD9745BCPZRL

Analog Devices

IC DAC 12BIT A-OUT 72LFCSP

MT25QU02GCBB8E12-0SIT

MT25QU02GCBB8E12-0SIT

Micron Technology Inc.

IC FLASH 2G SPI 133MHZ 24TPBGA

AD7997BRUZ-0

AD7997BRUZ-0

Analog Devices

IC ADC 10BIT SAR 20TSSOP

WSLP1206R0500FEA

WSLP1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 1206