ESH3B-M3/9AT
For Reference Only
| Part Number | ESH3B-M3/9AT |
| PNEDA Part # | ESH3B-M3-9AT |
| Description | DIODE GEN PURP 100V 3A DO214AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 4,176 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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ESH3B-M3/9AT Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | ESH3B-M3/9AT |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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ESH3B-M3/9AT Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 40ns |
| Current - Reverse Leakage @ Vr | 5µA @ 100V |
| Capacitance @ Vr, F | 70pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Sanken Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 250mA Voltage - Forward (Vf) (Max) @ If 2.5V @ 250mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 400ns Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case Axial Supplier Device Package - Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 120V Current - Average Rectified (Io) 15A Voltage - Forward (Vf) (Max) @ If 750mV @ 15A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 250µA @ 120V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer STMicroelectronics Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 15A Voltage - Forward (Vf) (Max) @ If 3.1V @ 15A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 40ns Current - Reverse Leakage @ Vr 10µA @ 1200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 175°C (Max) |
