ESH1DHE3_A/I
For Reference Only
| Part Number | ESH1DHE3_A/I |
| PNEDA Part # | ESH1DHE3_A-I |
| Description | DIODE GEN PURP 200V 1A DO214AC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 3,402 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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ESH1DHE3_A/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | ESH1DHE3_A/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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ESH1DHE3_A/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25ns |
| Current - Reverse Leakage @ Vr | 1µA @ 200V |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1µA @ 800V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case A, Axial Supplier Device Package - Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Central Semiconductor Corp Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 975mV @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 80pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Diodes Incorporated Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 500ns Current - Reverse Leakage @ Vr 5µA @ 1000V Capacitance @ Vr, F 15pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package SMA Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 70A Voltage - Forward (Vf) (Max) @ If 1.46V @ 220A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4.5mA @ 1600V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-203AB Operating Temperature - Junction -65°C ~ 150°C |
