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ES3DHE3J_A/I

ES3DHE3J_A/I

For Reference Only

Part Number ES3DHE3J_A/I
PNEDA Part # ES3DHE3J_A-I
Description DIODE GEN PURP 200V 3A DO214AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ES3DHE3J_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberES3DHE3J_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
ES3DHE3J_A/I, ES3DHE3J_A/I Datasheet (Total Pages: 5, Size: 81.72 KB)
PDFES3DHE3/57T Datasheet Cover
ES3DHE3/57T Datasheet Page 2 ES3DHE3/57T Datasheet Page 3 ES3DHE3/57T Datasheet Page 4 ES3DHE3/57T Datasheet Page 5

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ES3DHE3J_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If900mV @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30ns
Current - Reverse Leakage @ Vr10µA @ 200V
Capacitance @ Vr, F45pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C

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