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ES2GHE3_A/I

ES2GHE3_A/I

For Reference Only

Part Number ES2GHE3_A/I
PNEDA Part # ES2GHE3_A-I
Description DIODE GEN PURP 400V 2A DO214AA
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ES2GHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberES2GHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
ES2GHE3_A/I, ES2GHE3_A/I Datasheet (Total Pages: 5, Size: 91.51 KB)
PDFES2GHE3/52T Datasheet Cover
ES2GHE3/52T Datasheet Page 2 ES2GHE3/52T Datasheet Page 3 ES2GHE3/52T Datasheet Page 4 ES2GHE3/52T Datasheet Page 5

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ES2GHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)400V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If1.1V @ 2A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35ns
Current - Reverse Leakage @ Vr10µA @ 50V
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)
Operating Temperature - Junction-55°C ~ 150°C

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