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ES2BHE3_A/I

ES2BHE3_A/I

For Reference Only

Part Number ES2BHE3_A/I
PNEDA Part # ES2BHE3_A-I
Description DIODE GEN PURP 100V 2A DO214AA
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ES2BHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberES2BHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
ES2BHE3_A/I, ES2BHE3_A/I Datasheet (Total Pages: 5, Size: 84.05 KB)
PDFES2DHE3J/52T Datasheet Cover
ES2DHE3J/52T Datasheet Page 2 ES2DHE3J/52T Datasheet Page 3 ES2DHE3J/52T Datasheet Page 4 ES2DHE3J/52T Datasheet Page 5

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ES2BHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If900mV @ 2A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)20ns
Current - Reverse Leakage @ Vr10µA @ 50V
Capacitance @ Vr, F18pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMB)
Operating Temperature - Junction-55°C ~ 150°C

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