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ES1BHE3_A/I

ES1BHE3_A/I

For Reference Only

Part Number ES1BHE3_A/I
PNEDA Part # ES1BHE3_A-I
Description DIODE GEN PURP 100V 1A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ES1BHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberES1BHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
ES1BHE3_A/I, ES1BHE3_A/I Datasheet (Total Pages: 5, Size: 80.1 KB)
PDFES1DHE3/61T Datasheet Cover
ES1DHE3/61T Datasheet Page 2 ES1DHE3/61T Datasheet Page 3 ES1DHE3/61T Datasheet Page 4 ES1DHE3/61T Datasheet Page 5

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ES1BHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If920mV @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25ns
Current - Reverse Leakage @ Vr5µA @ 100V
Capacitance @ Vr, F10pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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