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EPC2111ENGRT

EPC2111ENGRT

For Reference Only

Part Number EPC2111ENGRT
PNEDA Part # EPC2111ENGRT
Description GAN TRANS ASYMMETRICAL HALF BRID
Manufacturer EPC
Unit Price Request a Quote
In Stock 2,430
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2111ENGRT Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2111ENGRT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2111ENGRT, EPC2111ENGRT Datasheet (Total Pages: 9, Size: 2,022.89 KB)
PDFEPC2111ENGRT Datasheet Cover
EPC2111ENGRT Datasheet Page 2 EPC2111ENGRT Datasheet Page 3 EPC2111ENGRT Datasheet Page 4 EPC2111ENGRT Datasheet Page 5 EPC2111ENGRT Datasheet Page 6 EPC2111ENGRT Datasheet Page 7 EPC2111ENGRT Datasheet Page 8 EPC2111ENGRT Datasheet Page 9

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EPC2111ENGRT Specifications

ManufacturerEPC
Series-
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Vgs(th) (Max) @ Id2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 15V, 590pF @ 15V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Current - Continuous Drain (Id) @ 25°C

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