EPC2110ENGRT
For Reference Only
| Part Number | EPC2110ENGRT |
| PNEDA Part # | EPC2110ENGRT |
| Description | GAN TRANS 2N-CH 120V BUMPED DIE |
| Manufacturer | EPC |
| Unit Price | Request a Quote |
| In Stock | 92,868 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
EPC2110ENGRT Resources
| Brand | EPC |
| ECAD Module |
|
| Mfr. Part Number | EPC2110ENGRT |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- EPC2110ENGRT Datasheet
- where to find EPC2110ENGRT
- EPC
- EPC EPC2110ENGRT
- EPC2110ENGRT PDF Datasheet
- EPC2110ENGRT Stock
- EPC2110ENGRT Pinout
- Datasheet EPC2110ENGRT
- EPC2110ENGRT Supplier
- EPC Distributor
- EPC2110ENGRT Price
- EPC2110ENGRT Distributor
EPC2110ENGRT Specifications
| Manufacturer | EPC |
| Series | eGaN® |
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A Rds On (Max) @ Id, Vgs 6.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 15V Power - Max 2.7W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case DirectFET™ Isometric MA Supplier Device Package DIRECTFET™ MA |
Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 4 P-Channel, Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 780mV @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature - Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 220mA (Ta) Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 12.3pF @ 15V Power - Max - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-XFLGA Supplier Device Package 6-XLLGA (.90x.65) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.4A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs 64mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.9W (Ta), 7.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |
