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EPC2110ENGRT

EPC2110ENGRT

For Reference Only

Part Number EPC2110ENGRT
PNEDA Part # EPC2110ENGRT
Description GAN TRANS 2N-CH 120V BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 92,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2110ENGRT Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2110ENGRT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2110ENGRT, EPC2110ENGRT Datasheet (Total Pages: 7, Size: 1,445.13 KB)
PDFEPC2110 Datasheet Cover
EPC2110 Datasheet Page 2 EPC2110 Datasheet Page 3 EPC2110 Datasheet Page 4 EPC2110 Datasheet Page 5 EPC2110 Datasheet Page 6 EPC2110 Datasheet Page 7

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EPC2110ENGRT Specifications

ManufacturerEPC
SerieseGaN®
FET Type2 N-Channel (Dual) Common Source
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds80pF @ 60V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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