EPC2033
For Reference Only
| Part Number | EPC2033 |
| PNEDA Part # | EPC2033 |
| Description | GAN TRANS 150V 7MOHM BUMPED DIE |
| Manufacturer | EPC |
| Unit Price | Request a Quote |
| In Stock | 32,334 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EPC2033 Resources
| Brand | EPC |
| ECAD Module |
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| Mfr. Part Number | EPC2033 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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EPC2033 Specifications
| Manufacturer | EPC |
| Series | eGaN® |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1140pF @ 75V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 30V FET Feature - Power Dissipation (Max) 3W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSOP Package / Case 8-PowerTDFN |
