EGP30CHE3/54
For Reference Only
| Part Number | EGP30CHE3/54 |
| PNEDA Part # | EGP30CHE3-54 |
| Description | DIODE GEN PURP 150V 3A GP20 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 4,338 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EGP30CHE3/54 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | EGP30CHE3/54 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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EGP30CHE3/54 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | SUPERECTIFIER® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 950mV @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 5µA @ 150V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | DO-201AA, DO-27, Axial |
| Supplier Device Package | GP20 |
| Operating Temperature - Junction | -65°C ~ 150°C |
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 3A (DC) Voltage - Forward (Vf) (Max) @ If 0.98V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 150°C |
