EGL34DHE3/83
For Reference Only
| Part Number | EGL34DHE3/83 |
| PNEDA Part # | EGL34DHE3-83 |
| Description | DIODE GEN PURP 200V 500MA DO213 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,094 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EGL34DHE3/83 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | EGL34DHE3/83 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
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Notes
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EGL34DHE3/83 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | SUPERECTIFIER® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 500mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 500mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitance @ Vr, F | 7pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AA (Glass) |
| Supplier Device Package | DO-213AA (GL34) |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Nexperia USA Inc. Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 530mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 150µA @ 60V Capacitance @ Vr, F 240pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case SOD-128 Supplier Device Package CFP5 Operating Temperature - Junction 150°C (Max) |
Manufacturer Central Semiconductor Corp Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 700mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 50V Capacitance @ Vr, F 170pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AC, DO-15, Axial Supplier Device Package DO-15 Operating Temperature - Junction -65°C ~ 125°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 6A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 6A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 110µA @ 650V Capacitance @ Vr, F 190pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case 4-PowerTSFN Supplier Device Package PG-VSON-4 Operating Temperature - Junction -55°C ~ 150°C |
