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EGF1BHE3_A/I

EGF1BHE3_A/I

For Reference Only

Part Number EGF1BHE3_A/I
PNEDA Part # EGF1BHE3_A-I
Description DIODE GEN PURP 100V 1A DO214BA
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 8,874
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EGF1BHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberEGF1BHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
EGF1BHE3_A/I, EGF1BHE3_A/I Datasheet (Total Pages: 4, Size: 75.97 KB)
PDFEGF1D-2HE3/67A Datasheet Cover
EGF1D-2HE3/67A Datasheet Page 2 EGF1D-2HE3/67A Datasheet Page 3 EGF1D-2HE3/67A Datasheet Page 4

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EGF1BHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101, Superectifier®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr1µA @ 100V
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214BA
Supplier Device PackageDO-214BA (GF1)
Operating Temperature - Junction-65°C ~ 175°C

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