EGF1AHE3_A/H
For Reference Only
| Part Number | EGF1AHE3_A/H |
| PNEDA Part # | EGF1AHE3_A-H |
| Description | DIODE GEN PURP 50V 1A DO214BA |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,976 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EGF1AHE3_A/H Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | EGF1AHE3_A/H |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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EGF1AHE3_A/H Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101, Superectifier® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 5µA @ 50V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214BA |
| Supplier Device Package | DO-214BA (GF1) |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 3V @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 30µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Full Pack Supplier Device Package ITO-220AC Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1700V Current - Average Rectified (Io) 216A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 50A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 60µA @ 1700V Capacitance @ Vr, F 3193pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247-2 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Microsemi Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 690mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 60V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Kyocera International Inc. Electronic Components Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 65V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 610mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 300µA @ 65V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package DO-214AC (SMA) Operating Temperature - Junction -40°C ~ 150°C |
