DTC124ECAHZGT116
For Reference Only
| Part Number | DTC124ECAHZGT116 |
| PNEDA Part # | DTC124ECAHZGT116 |
| Description | NPN 100MA 50V DIGITAL TRANSISTOR |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,294 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DTC124ECAHZGT116 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | DTC124ECAHZGT116 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Datasheet |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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DTC124ECAHZGT116 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | Automotive, AEC-Q101 |
| Transistor Type | NPN - Pre-Biased + Diode |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| Frequency - Transition | 250MHz |
| Power - Max | 350mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SST3 |
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Manufacturer ON Semiconductor Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |
Manufacturer Rohm Semiconductor Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 30mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package UMT3 |
