DTC114YET1G
For Reference Only
| Part Number | DTC114YET1G |
| PNEDA Part # | DTC114YET1G |
| Description | TRANS PREBIAS NPN 200MW SC75 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 606,150 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DTC114YET1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | DTC114YET1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Datasheet |
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DTC114YET1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
| Supplier Device Package | SC-75, SOT-416 |
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Manufacturer Panasonic Electronic Components Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 150MHz Power - Max 125mW Mounting Type Surface Mount Package / Case SC-89, SOT-490 Supplier Device Package SSMini3-F3 |
Manufacturer Panasonic Electronic Components Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case 3-SSIP Supplier Device Package NS-A1 |
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