DTA114TUAT106
For Reference Only
| Part Number | DTA114TUAT106 |
| PNEDA Part # | DTA114TUAT106 |
| Description | TRANS PREBIAS PNP 200MW UMT3 |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 22,734 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DTA114TUAT106 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | DTA114TUAT106 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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DTA114TUAT106 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | UMT3 |
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Manufacturer Infineon Technologies Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Diodes Incorporated Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 1 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 40V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
