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DRA5115T0L

DRA5115T0L

For Reference Only

Part Number DRA5115T0L
PNEDA Part # DRA5115T0L
Description TRANS PREBIAS PNP 150MW SMINI3
Manufacturer Panasonic Electronic Components
Unit Price Request a Quote
In Stock 5,364
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DRA5115T0L Resources

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DRA5115T0L Specifications

ManufacturerPanasonic Electronic Components
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSC-85
Supplier Device PackageSMini3-F2-B

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Series

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Manufacturer

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Series

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Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

SC-75

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