Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DN2625K4-G

DN2625K4-G

For Reference Only

Part Number DN2625K4-G
PNEDA Part # DN2625K4-G
Description MOSFET N-CH 250V 1.1A 3DPAK
Manufacturer Microchip Technology
Unit Price Request a Quote
In Stock 358
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DN2625K4-G Resources

Brand Microchip Technology
ECAD Module ECAD
Mfr. Part NumberDN2625K4-G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DN2625K4-G Datasheet
  • where to find DN2625K4-G
  • Microchip Technology

  • Microchip Technology DN2625K4-G
  • DN2625K4-G PDF Datasheet
  • DN2625K4-G Stock

  • DN2625K4-G Pinout
  • Datasheet DN2625K4-G
  • DN2625K4-G Supplier

  • Microchip Technology Distributor
  • DN2625K4-G Price
  • DN2625K4-G Distributor

DN2625K4-G Specifications

ManufacturerMicrochip Technology
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C1.1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs3.5Ohm @ 1A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs7.04nC @ 1.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

TK35N65W5,S1F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

95mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 2.1mA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 300V

FET Feature

-

Power Dissipation (Max)

270W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

MTB50P03HDLG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

25mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

4900pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3.75nF @ 25V

FET Feature

-

Power Dissipation (Max)

320W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AA

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NVMFS6H858NWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IPZ60R099C7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

99mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id

4V @ 490µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1819pF @ 400V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-4

Package / Case

TO-247-4

Recently Sold

PCMB063T-3R3MS

PCMB063T-3R3MS

Susumu

FIXED IND 3.3UH 6A 30 MOHM SMD

BAT46WJ,115

BAT46WJ,115

Nexperia

DIODE SCHOTTKY 100V 250MA SOD323

MAX1681ESA

MAX1681ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

LM258DT

LM258DT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

NC7WZ17P6

NC7WZ17P6

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

CYUSB3014-BZXC

CYUSB3014-BZXC

Cypress Semiconductor

IC ARM9 USB3 CONTROLLER 121FBGA

WSL2512R0500FEA

WSL2512R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 2512

CY7C68013A-56PVXI

CY7C68013A-56PVXI

Cypress Semiconductor

IC MCU USB PERIPH HI SPD 56-SSOP

PME271Y447MR30

PME271Y447MR30

KEMET

CAP FILM 4700PF 20% 1KVDC RADIAL

MBR0540T1G

MBR0540T1G

ON Semiconductor

DIODE SCHOTTKY 40V 500MA SOD123

TJA1052IT/5Y

TJA1052IT/5Y

NXP

DGTL ISOLATOR 5KV 2CH CAN 16SO

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO