Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMTH10H010SPSQ-13

DMTH10H010SPSQ-13

For Reference Only

Part Number DMTH10H010SPSQ-13
PNEDA Part # DMTH10H010SPSQ-13
Description MOSFET N-CHAN 61V 100V POWERDI50
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMTH10H010SPSQ-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMTH10H010SPSQ-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMTH10H010SPSQ-13, DMTH10H010SPSQ-13 Datasheet (Total Pages: 7, Size: 450.03 KB)
PDFDMTH10H010SPSQ-13 Datasheet Cover
DMTH10H010SPSQ-13 Datasheet Page 2 DMTH10H010SPSQ-13 Datasheet Page 3 DMTH10H010SPSQ-13 Datasheet Page 4 DMTH10H010SPSQ-13 Datasheet Page 5 DMTH10H010SPSQ-13 Datasheet Page 6 DMTH10H010SPSQ-13 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMTH10H010SPSQ-13 Datasheet
  • where to find DMTH10H010SPSQ-13
  • Diodes Incorporated

  • Diodes Incorporated DMTH10H010SPSQ-13
  • DMTH10H010SPSQ-13 PDF Datasheet
  • DMTH10H010SPSQ-13 Stock

  • DMTH10H010SPSQ-13 Pinout
  • Datasheet DMTH10H010SPSQ-13
  • DMTH10H010SPSQ-13 Supplier

  • Diodes Incorporated Distributor
  • DMTH10H010SPSQ-13 Price
  • DMTH10H010SPSQ-13 Distributor

DMTH10H010SPSQ-13 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C11.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4468pF @ 50V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 166W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI5060-8
Package / Case8-PowerTDFN

The Products You May Be Interested In

STD3N62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

385pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPP110N20N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 88A, 10V

Vgs(th) (Max) @ Id

4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7100pF @ 100V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

AOSS62934

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

AlphaSGT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

140mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

IPI80CN10N G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 12µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

716pF @ 50V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FDME510PZT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

37mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1490pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MicroFet 1.6x1.6 Thin

Package / Case

6-PowerUFDFN

Recently Sold

LT1963AEST-2.5#PBF

LT1963AEST-2.5#PBF

Linear Technology/Analog Devices

IC REG LINEAR 2.5V 1.5A SOT223-3

BSS138-7-F

BSS138-7-F

Diodes Incorporated

MOSFET N-CH 50V 200MA SOT23-3

STM32H743VIT6

STM32H743VIT6

STMicroelectronics

IC MCU 32BIT 2MB FLASH 100LQFP

0233004.MXP

0233004.MXP

Littelfuse

FUSE GLASS 4A 125VAC 5X20MM

A2557SLBTR-T

A2557SLBTR-T

Allegro MicroSystems, LLC

IC DRIVER QUAD 60V 300MA 16SOIC

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

PE-64934NL

PE-64934NL

Pulse Electronics Network

XFRMR T1/CEPT/ISDN-PRI 1:1

ATMEGA16-16AC

ATMEGA16-16AC

Microchip Technology

IC MCU 8BIT 16KB FLASH 44TQFP

UPD720114GA-YEU-AT

UPD720114GA-YEU-AT

Renesas Electronics America

IC CONTROLLER USB 48TQFP

RB496EATR

RB496EATR

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 20V TSMD5

MIC5209-3.3YS

MIC5209-3.3YS

Microchip Technology

IC REG LINEAR 3.3V 500MA SOT223

SRN6045TA-470M

SRN6045TA-470M

Bourns

FIXED IND 47UH 1.6A 200 MOHM SMD