Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMT6010LSS-13

DMT6010LSS-13

For Reference Only

Part Number DMT6010LSS-13
PNEDA Part # DMT6010LSS-13
Description MOSFET BVDSS: 41V 60V SO-8 T&R 2
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 19,260
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMT6010LSS-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMT6010LSS-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMT6010LSS-13, DMT6010LSS-13 Datasheet (Total Pages: 7, Size: 550.74 KB)
PDFDMT6010LSS-13 Datasheet Cover
DMT6010LSS-13 Datasheet Page 2 DMT6010LSS-13 Datasheet Page 3 DMT6010LSS-13 Datasheet Page 4 DMT6010LSS-13 Datasheet Page 5 DMT6010LSS-13 Datasheet Page 6 DMT6010LSS-13 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMT6010LSS-13 Datasheet
  • where to find DMT6010LSS-13
  • Diodes Incorporated

  • Diodes Incorporated DMT6010LSS-13
  • DMT6010LSS-13 PDF Datasheet
  • DMT6010LSS-13 Stock

  • DMT6010LSS-13 Pinout
  • Datasheet DMT6010LSS-13
  • DMT6010LSS-13 Supplier

  • Diodes Incorporated Distributor
  • DMT6010LSS-13 Price
  • DMT6010LSS-13 Distributor

DMT6010LSS-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2090pF @ 30V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

IPW50R399CPFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

399mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 330µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

FQA140N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

285nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

7900pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

PSMN009-100P,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

156nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8250pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FQD7N10TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STW40N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

99mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2355pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

Recently Sold

IHLM2525CZER100M01

IHLM2525CZER100M01

Vishay Dale

FIXED IND 10UH 3A 105 MOHM SMD

BNX022-01L

BNX022-01L

Murata

FILTER LC 1UF SMD

TIC246M-S

TIC246M-S

Bourns

TRIAC 600V 16A TO220

MC9S08LC36LK

MC9S08LC36LK

NXP

IC MCU 8BIT 36KB FLASH 80FQFP

MAX1853EXT

MAX1853EXT

Maxim Integrated

IC REG CHARGE PUMP INV SC70-6

GP2D005A120A

GP2D005A120A

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 5A TO220-2

SISS27DN-T1-GE3

SISS27DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 50A PPAK 1212-8S

IRM-20-24

IRM-20-24

MEAN WELL

AC/DC CONVERTER 24V 22W

MAX232AEPE

MAX232AEPE

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16DIP

TAJC337M006RNJ

TAJC337M006RNJ

CAP TANT 330UF 20% 6.3V 2312

WSL20103L000FEA

WSL20103L000FEA

Vishay Dale

RES 0.003 OHM 1% 1/2W 2010

MX29GL512FLT2I-10Q

MX29GL512FLT2I-10Q

Macronix

IC FLASH 512M PARALLEL 56TSOP