Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMT47M2SFVW-13

DMT47M2SFVW-13

For Reference Only

Part Number DMT47M2SFVW-13
PNEDA Part # DMT47M2SFVW-13
Description MOSFET BVDSS: 31V-40V POWERDI333
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,274
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMT47M2SFVW-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMT47M2SFVW-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMT47M2SFVW-13, DMT47M2SFVW-13 Datasheet (Total Pages: 7, Size: 431.15 KB)
PDFDMT47M2SFVW-7 Datasheet Cover
DMT47M2SFVW-7 Datasheet Page 2 DMT47M2SFVW-7 Datasheet Page 3 DMT47M2SFVW-7 Datasheet Page 4 DMT47M2SFVW-7 Datasheet Page 5 DMT47M2SFVW-7 Datasheet Page 6 DMT47M2SFVW-7 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMT47M2SFVW-13 Datasheet
  • where to find DMT47M2SFVW-13
  • Diodes Incorporated

  • Diodes Incorporated DMT47M2SFVW-13
  • DMT47M2SFVW-13 PDF Datasheet
  • DMT47M2SFVW-13 Stock

  • DMT47M2SFVW-13 Pinout
  • Datasheet DMT47M2SFVW-13
  • DMT47M2SFVW-13 Supplier

  • Diodes Incorporated Distributor
  • DMT47M2SFVW-13 Price
  • DMT47M2SFVW-13 Distributor

DMT47M2SFVW-13 Specifications

ManufacturerDiodes Incorporated
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

AUIRF1010EZSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 51A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2810pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTMFS4922NET1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17.1A (Ta), 147A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

76.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5505pF @ 15V

FET Feature

-

Power Dissipation (Max)

930mW (Ta), 69.44W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

FCD900N60Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 25V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STL28N60DM2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IPW60R120P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

120mOhm @ 8.2A, 10V

Vgs(th) (Max) @ Id

4V @ 410µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1544pF @ 400V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

Recently Sold

LTM4613IV#PBF

LTM4613IV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 12V 8A

MMSZ4699T1G

MMSZ4699T1G

ON Semiconductor

DIODE ZENER 12V 500MW SOD123

MMA7660FCT

MMA7660FCT

NXP

ACCELEROMETER 1.5G I2C 10DFN

T520V337M2R5ATE025

T520V337M2R5ATE025

KEMET

CAP TANT POLY 330UF 2.5V 2917

J201

J201

ON Semiconductor

JFET N-CH 40V 0.625W TO92

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

ACPL-M21L-500E

ACPL-M21L-500E

Broadcom

OPTOISO 3.75KV PUSH PULL 5SO

SMBJ15A-E3/52

SMBJ15A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 15V 24.4V DO214AA

PTN3363BSMP

PTN3363BSMP

NXP

IC DVI/HDMI LVL SHIFTER 32HVQFN

FGH40N60SMD

FGH40N60SMD

ON Semiconductor

IGBT 600V 80A 349W TO-247-3

DEA1X3D470JN2A

DEA1X3D470JN2A

Murata

CAP CER 47PF 2KV SL RADIAL

R5F21335CNFP#30

R5F21335CNFP#30

Renesas Electronics America

IC MCU 16BIT 24KB FLASH 32LQFP