Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN62D0LFD-7

DMN62D0LFD-7

For Reference Only

Part Number DMN62D0LFD-7
PNEDA Part # DMN62D0LFD-7
Description MOSFET N-CH 60V 0.31A 3-DFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN62D0LFD-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN62D0LFD-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN62D0LFD-7 Datasheet
  • where to find DMN62D0LFD-7
  • Diodes Incorporated

  • Diodes Incorporated DMN62D0LFD-7
  • DMN62D0LFD-7 PDF Datasheet
  • DMN62D0LFD-7 Stock

  • DMN62D0LFD-7 Pinout
  • Datasheet DMN62D0LFD-7
  • DMN62D0LFD-7 Supplier

  • Diodes Incorporated Distributor
  • DMN62D0LFD-7 Price
  • DMN62D0LFD-7 Distributor

DMN62D0LFD-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Rds On (Max) @ Id, Vgs2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs500nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds31pF @ 25V
FET Feature-
Power Dissipation (Max)480mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX1-DFN1212-3
Package / Case3-UDFN

The Products You May Be Interested In

FDMC7692S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®, SyncFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12.5A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.3mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1385pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 27W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (3.3x3.3)

Package / Case

8-PowerWDFN

IRL640L

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

180mOhm @ 10A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRLBA3803P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

179A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

5mOhm @ 71A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 4.5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

5000pF @ 25V

FET Feature

-

Power Dissipation (Max)

270W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

SUPER-220™ (TO-273AA)

Package / Case

TO-273AA

FQP6N80

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.95Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

TPCC8103(TE12L,QM)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSV

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta), 27W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

Recently Sold

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

M24M01-RMN6P

M24M01-RMN6P

STMicroelectronics

IC EEPROM 1M I2C 1MHZ 8SO

UPD720114GA-YEU-AT

UPD720114GA-YEU-AT

Renesas Electronics America

IC CONTROLLER USB 48TQFP

WSL0805R0500FEA

WSL0805R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/8W 0805

PCA9617ADPJ

PCA9617ADPJ

NXP

IC REDRIVER I2C 1CH 1MHZ 8TSSOP

PIC16LF877A-I/L

PIC16LF877A-I/L

Microchip Technology

IC MCU 8BIT 14KB FLASH 44PLCC

PA0277NL

PA0277NL

Pulse Electronics Power

FIXED IND 700NH 10.7A 95 MOHM

ADF4360-7BCPZRL7

ADF4360-7BCPZRL7

Analog Devices

IC SYNTHESIZER VCO 24LFCSP

STM32F103C8T6

STM32F103C8T6

STMicroelectronics

IC MCU 32BIT 64KB FLASH 48LQFP

SMBJ26A-E3/52

SMBJ26A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 26V 42.1V DO214AA

ISD2360SYI

ISD2360SYI

Nuvoton Technology

IC VOICE REC/PLAY 64SEC 16SOP

TSH82IYDT

TSH82IYDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO