DMN61D9UDW-13
For Reference Only
| Part Number | DMN61D9UDW-13 |
| PNEDA Part # | DMN61D9UDW-13 |
| Description | MOSFET 2N-CH 60V 0.35A SOT363 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 5,598 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
DMN61D9UDW-13 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | DMN61D9UDW-13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMN61D9UDW-13 Datasheet
- where to find DMN61D9UDW-13
- Diodes Incorporated
- Diodes Incorporated DMN61D9UDW-13
- DMN61D9UDW-13 PDF Datasheet
- DMN61D9UDW-13 Stock
- DMN61D9UDW-13 Pinout
- Datasheet DMN61D9UDW-13
- DMN61D9UDW-13 Supplier
- Diodes Incorporated Distributor
- DMN61D9UDW-13 Price
- DMN61D9UDW-13 Distributor
DMN61D9UDW-13 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 350mA |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 28.5pF @ 30V |
| Power - Max | 320mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
The Products You May Be Interested In
|
Manufacturer Renesas Electronics America Series - FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Dual), Schottky FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 74A (Tc) Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id 3V @ 2mA Gate Charge (Qg) (Max) @ Vgs 272nC @ 20V Input Capacitance (Ciss) (Max) @ Vds 5120pF @ 1000V Power - Max 470W Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Package / Case SP1 Supplier Device Package SP1 |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 20V Power - Max 2W Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.4A Rds On (Max) @ Id, Vgs 30mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V Power - Max 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package Micro8™ |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.3A Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
