DMN61D8LVT-7

For Reference Only
Part Number | DMN61D8LVT-7 |
PNEDA Part # | DMN61D8LVT-7 |
Description | MOSFET 2N-CH 60V 0.63A TSOT26 |
Manufacturer | Diodes Incorporated |
Unit Price | Request a Quote |
In Stock | 55,770 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
DMN61D8LVT-7 Resources
Brand | Diodes Incorporated |
ECAD Module |
![]() |
Mfr. Part Number | DMN61D8LVT-7 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
Payment Method






- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode





- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMN61D8LVT-7 Datasheet
- where to find DMN61D8LVT-7
- Diodes Incorporated
- Diodes Incorporated DMN61D8LVT-7
- DMN61D8LVT-7 PDF Datasheet
- DMN61D8LVT-7 Stock
- DMN61D8LVT-7 Pinout
- Datasheet DMN61D8LVT-7
- DMN61D8LVT-7 Supplier
- Diodes Incorporated Distributor
- DMN61D8LVT-7 Price
- DMN61D8LVT-7 Distributor
DMN61D8LVT-7 Specifications
Manufacturer | Diodes Incorporated |
Series | - |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 630mA |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 150mA, 5V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V |
Power - Max | 820mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | TSOT-26 |
The Products You May Be Interested In
Manufacturer NXP USA Inc. Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 46mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 268pF @ 10V Power - Max 510mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package DFN2020-6 |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 180mA, 100mA Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6 (1.6x1.6) |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A, 7.4A Rds On (Max) @ Id, Vgs 17mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 204A (Tc) Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 4V @ 35.2mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V Power - Max 1130W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type - Package / Case Module Supplier Device Package Module |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.4A, 3.7A Rds On (Max) @ Id, Vgs 36mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |