DMN2022UFDF-7
For Reference Only
| Part Number | DMN2022UFDF-7 |
| PNEDA Part # | DMN2022UFDF-7 |
| Description | MOSFET N-CH 20V 7.9A 6DFN |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 151,086 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
DMN2022UFDF-7 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | DMN2022UFDF-7 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMN2022UFDF-7 Datasheet
- where to find DMN2022UFDF-7
- Diodes Incorporated
- Diodes Incorporated DMN2022UFDF-7
- DMN2022UFDF-7 PDF Datasheet
- DMN2022UFDF-7 Stock
- DMN2022UFDF-7 Pinout
- Datasheet DMN2022UFDF-7
- DMN2022UFDF-7 Supplier
- Diodes Incorporated Distributor
- DMN2022UFDF-7 Price
- DMN2022UFDF-7 Distributor
DMN2022UFDF-7 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 8V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 907pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-UDFN2020 (2x2) |
| Package / Case | 6-UDFN Exposed Pad |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 20V FET Feature - Power Dissipation (Max) 1.25W (Ta), 78.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3110pF @ 15V FET Feature - Power Dissipation (Max) 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO251-3-1 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2A, 10V Vgs(th) (Max) @ Id 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 263pF @ 100V FET Feature - Power Dissipation (Max) 56.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251A Package / Case TO-251-3 Stub Leads, IPak |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 24.7A (Ta), 116A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1972pF @ 15V FET Feature - Power Dissipation (Max) 3.61W (Ta), 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.9Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1969pF @ 25V FET Feature - Power Dissipation (Max) 40.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
