Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN2015UFDE-7

DMN2015UFDE-7

For Reference Only

Part Number DMN2015UFDE-7
PNEDA Part # DMN2015UFDE-7
Description MOSFET N-CH 20V 10.5A U-DFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN2015UFDE-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN2015UFDE-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN2015UFDE-7, DMN2015UFDE-7 Datasheet (Total Pages: 6, Size: 520.85 KB)
PDFDMN2015UFDE-7 Datasheet Cover
DMN2015UFDE-7 Datasheet Page 2 DMN2015UFDE-7 Datasheet Page 3 DMN2015UFDE-7 Datasheet Page 4 DMN2015UFDE-7 Datasheet Page 5 DMN2015UFDE-7 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN2015UFDE-7 Datasheet
  • where to find DMN2015UFDE-7
  • Diodes Incorporated

  • Diodes Incorporated DMN2015UFDE-7
  • DMN2015UFDE-7 PDF Datasheet
  • DMN2015UFDE-7 Stock

  • DMN2015UFDE-7 Pinout
  • Datasheet DMN2015UFDE-7
  • DMN2015UFDE-7 Supplier

  • Diodes Incorporated Distributor
  • DMN2015UFDE-7 Price
  • DMN2015UFDE-7 Distributor

DMN2015UFDE-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs11.6mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45.6nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1779pF @ 10V
FET Feature-
Power Dissipation (Max)660mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type E)
Package / Case6-PowerUDFN

The Products You May Be Interested In

FQP17N08

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

16.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

115mOhm @ 8.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IXTV72N30T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

72A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab

IRFI4510GPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2998pF @ 50V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB Full-Pak

Package / Case

TO-220-3 Full Pack

IPB100N06S2L05ATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

230nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5660pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

NXP USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

70mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

520mW (Ta), 8.3W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2020-6

Package / Case

6-UDFN Exposed Pad

Recently Sold

MPU-6000

MPU-6000

TDK InvenSense

IMU ACCEL/GYRO I2C/SPI 24QFN

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

WIZ810MJ

WIZ810MJ

WIZnet

CNTRLR ETHERNET 10/100 BASE-T/TX

S25FL256SAGMFI000

S25FL256SAGMFI000

Cypress Semiconductor

IC FLASH 256M SPI 133MHZ 16SOIC

TCS-DL004-500-WH

TCS-DL004-500-WH

Bourns

SUPPRESSOR TCS DUAL 40V 500MA

NFM21CC223R1H3D

NFM21CC223R1H3D

Murata

CAP FEEDTHRU 0.022UF 50V 0805

ADM1184ARMZ-REEL7

ADM1184ARMZ-REEL7

Analog Devices

IC VOLT MONITOR/SEQ 4CH 10MSOP

NC7SV74K8X

NC7SV74K8X

ON Semiconductor

IC FF D-TYPE SNGL 1BIT US8

MAX14780EESA+T

MAX14780EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

SMAJ40CA

SMAJ40CA

Bourns

TVS DIODE 40V 64.5V SMA

HSMF-C155

HSMF-C155

Broadcom

LED GREEN/RED DIFFUSED CHIP SMD