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DMN2009LSS-13

DMN2009LSS-13

For Reference Only

Part Number DMN2009LSS-13
PNEDA Part # DMN2009LSS-13
Description MOSFET N-CH 20V 12A 8-SOIC
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN2009LSS-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN2009LSS-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN2009LSS-13, DMN2009LSS-13 Datasheet (Total Pages: 5, Size: 232.39 KB)
PDFDMN2009LSS-13 Datasheet Cover
DMN2009LSS-13 Datasheet Page 2 DMN2009LSS-13 Datasheet Page 3 DMN2009LSS-13 Datasheet Page 4 DMN2009LSS-13 Datasheet Page 5

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DMN2009LSS-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs58.3nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2555pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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