DMN13H750S-13
For Reference Only
Part Number | DMN13H750S-13 |
PNEDA Part # | DMN13H750S-13 |
Description | MOSFET N-CH 130V 1A SOT23 |
Manufacturer | Diodes Incorporated |
Unit Price | Request a Quote |
In Stock | 8,622 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 29 - Dec 4 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
DMN13H750S-13 Resources
Brand | Diodes Incorporated |
ECAD Module | |
Mfr. Part Number | DMN13H750S-13 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMN13H750S-13 Datasheet
- where to find DMN13H750S-13
- Diodes Incorporated
- Diodes Incorporated DMN13H750S-13
- DMN13H750S-13 PDF Datasheet
- DMN13H750S-13 Stock
- DMN13H750S-13 Pinout
- Datasheet DMN13H750S-13
- DMN13H750S-13 Supplier
- Diodes Incorporated Distributor
- DMN13H750S-13 Price
- DMN13H750S-13 Distributor
DMN13H750S-13 Specifications
Manufacturer | Diodes Incorporated |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 130V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 750mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 231pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 770mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
The Products You May Be Interested In
Infineon Technologies Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 950V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 712pF @ 400V FET Feature - Power Dissipation (Max) 73W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Microchip Technology Manufacturer Microchip Technology Series TinyFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V Rds On (Max) @ Id, Vgs 450mOhm @ 100mA, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) 16V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 12V FET Feature - Power Dissipation (Max) 568mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-143 Package / Case TO-253-4, TO-253AA |
Nexperia Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 136nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10426pF @ 25V FET Feature - Power Dissipation (Max) 324W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ II Plus FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 950mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 271pF @ 100V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 15V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |