DMN10H120SFG-13
For Reference Only
Part Number | DMN10H120SFG-13 |
PNEDA Part # | DMN10H120SFG-13 |
Description | MOSFET N-CH 100V 3.8A POWERDI |
Manufacturer | Diodes Incorporated |
Unit Price | Request a Quote |
In Stock | 7,866 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
DMN10H120SFG-13 Resources
Brand | Diodes Incorporated |
ECAD Module | |
Mfr. Part Number | DMN10H120SFG-13 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMN10H120SFG-13 Datasheet
- where to find DMN10H120SFG-13
- Diodes Incorporated
- Diodes Incorporated DMN10H120SFG-13
- DMN10H120SFG-13 PDF Datasheet
- DMN10H120SFG-13 Stock
- DMN10H120SFG-13 Pinout
- Datasheet DMN10H120SFG-13
- DMN10H120SFG-13 Supplier
- Diodes Incorporated Distributor
- DMN10H120SFG-13 Price
- DMN10H120SFG-13 Distributor
DMN10H120SFG-13 Specifications
Manufacturer | Diodes Incorporated |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 110mOhm @ 3.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 549pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerDI3333-8 |
Package / Case | 8-PowerVDFN |
The Products You May Be Interested In
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series U-MOSIX-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13.5mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1875pF @ 30V FET Feature - Power Dissipation (Max) 81W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET®, StrongIRFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 192A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 115A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9500pF @ 50V FET Feature - Power Dissipation (Max) 441W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Microsemi Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 25.8A, 10V Vgs(th) (Max) @ Id 3.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs 154nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V FET Feature Super Junction Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D3Pak Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Rohm Semiconductor Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 62mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Vgs (Max) -8V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 6V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT3 Package / Case SC-96 |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 450mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 770pF @ 25V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |