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DMG8880LSS-13

DMG8880LSS-13

For Reference Only

Part Number DMG8880LSS-13
PNEDA Part # DMG8880LSS-13
Description MOSFET N-CH 30V 11.6A 8SOIC
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMG8880LSS-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMG8880LSS-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMG8880LSS-13, DMG8880LSS-13 Datasheet (Total Pages: 6, Size: 281.99 KB)
PDFDMG8880LSS-13 Datasheet Cover
DMG8880LSS-13 Datasheet Page 2 DMG8880LSS-13 Datasheet Page 3 DMG8880LSS-13 Datasheet Page 4 DMG8880LSS-13 Datasheet Page 5 DMG8880LSS-13 Datasheet Page 6

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DMG8880LSS-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1289pF @ 15V
FET Feature-
Power Dissipation (Max)1.43W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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