DMG4N65CTI

For Reference Only
Part Number | DMG4N65CTI |
PNEDA Part # | DMG4N65CTI |
Description | MOSFET N-CH 650V 4A ITO-220AB |
Manufacturer | Diodes Incorporated |
Unit Price | Request a Quote |
In Stock | 3,852 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMG4N65CTI Resources
Brand | Diodes Incorporated |
ECAD Module |
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Mfr. Part Number | DMG4N65CTI |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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DMG4N65CTI Specifications
Manufacturer | Diodes Incorporated |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 8.35W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220AB |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
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