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DMG4N65CTI

DMG4N65CTI

For Reference Only

Part Number DMG4N65CTI
PNEDA Part # DMG4N65CTI
Description MOSFET N-CH 650V 4A ITO-220AB
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 3,852
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMG4N65CTI Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMG4N65CTI
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMG4N65CTI, DMG4N65CTI Datasheet (Total Pages: 6, Size: 321.42 KB)
PDFDMG4N65CTI Datasheet Cover
DMG4N65CTI Datasheet Page 2 DMG4N65CTI Datasheet Page 3 DMG4N65CTI Datasheet Page 4 DMG4N65CTI Datasheet Page 5 DMG4N65CTI Datasheet Page 6

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DMG4N65CTI Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 25V
FET Feature-
Power Dissipation (Max)8.35W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab

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