DMG1012TQ-7
For Reference Only
| Part Number | DMG1012TQ-7 |
| PNEDA Part # | DMG1012TQ-7 |
| Description | MOSFET NCH 20V 630MA SOT523 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 6,552 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
DMG1012TQ-7 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | DMG1012TQ-7 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMG1012TQ-7 Datasheet
- where to find DMG1012TQ-7
- Diodes Incorporated
- Diodes Incorporated DMG1012TQ-7
- DMG1012TQ-7 PDF Datasheet
- DMG1012TQ-7 Stock
- DMG1012TQ-7 Pinout
- Datasheet DMG1012TQ-7
- DMG1012TQ-7 Supplier
- Diodes Incorporated Distributor
- DMG1012TQ-7 Price
- DMG1012TQ-7 Distributor
DMG1012TQ-7 Specifications
| Manufacturer | Diodes Incorporated |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 630mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 4.5V |
| Vgs (Max) | ±6V |
| Input Capacitance (Ciss) (Max) @ Vds | 60.67pF @ 16V |
| FET Feature | - |
| Power Dissipation (Max) | 280mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-523 |
| Package / Case | SOT-523 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series UniFET-II™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 3.25A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 735pF @ 25V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V FET Feature - Power Dissipation (Max) 143W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 46mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21.4nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 65mOhm @ 3A, 10V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Dual Package / Case PowerPAK® SC-70-6 Dual |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 49A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4860pF @ 30V FET Feature - Power Dissipation (Max) 3.2W (Ta), 139W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
