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DF80R12W2H3_B11

DF80R12W2H3_B11

For Reference Only

Part Number DF80R12W2H3_B11
PNEDA Part # DF80R12W2H3_B11
Description IGBT MODULE VCES 1200V 160A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,236
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DF80R12W2H3_B11 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberDF80R12W2H3_B11
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules

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DF80R12W2H3_B11 Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Configuration-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Power - Max-
Vce(on) (Max) @ Vge, Ic-
Current - Collector Cutoff (Max)-
Input Capacitance (Cies) @ Vce-
Input-
NTC Thermistor-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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NTC Thermistor

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Current - Collector (Ic) (Max)

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Power - Max

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Input

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NTC Thermistor

No

Operating Temperature

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