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DF23MR12W1M1B11BOMA1

DF23MR12W1M1B11BOMA1

For Reference Only

Part Number DF23MR12W1M1B11BOMA1
PNEDA Part # DF23MR12W1M1B11BOMA1
Description MOSFET MODULE 1200V 25A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,610
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DF23MR12W1M1B11BOMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberDF23MR12W1M1B11BOMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
DF23MR12W1M1B11BOMA1, DF23MR12W1M1B11BOMA1 Datasheet (Total Pages: 10, Size: 583.63 KB)
PDFDF23MR12W1M1B11BOMA1 Datasheet Cover
DF23MR12W1M1B11BOMA1 Datasheet Page 2 DF23MR12W1M1B11BOMA1 Datasheet Page 3 DF23MR12W1M1B11BOMA1 Datasheet Page 4 DF23MR12W1M1B11BOMA1 Datasheet Page 5 DF23MR12W1M1B11BOMA1 Datasheet Page 6 DF23MR12W1M1B11BOMA1 Datasheet Page 7 DF23MR12W1M1B11BOMA1 Datasheet Page 8 DF23MR12W1M1B11BOMA1 Datasheet Page 9 DF23MR12W1M1B11BOMA1 Datasheet Page 10

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DF23MR12W1M1B11BOMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolSiC™+
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C25A
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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