Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DF23MR12W1M1B11BOMA1

DF23MR12W1M1B11BOMA1

For Reference Only

Part Number DF23MR12W1M1B11BOMA1
PNEDA Part # DF23MR12W1M1B11BOMA1
Description MOSFET MODULE 1200V 25A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,610
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DF23MR12W1M1B11BOMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberDF23MR12W1M1B11BOMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
DF23MR12W1M1B11BOMA1, DF23MR12W1M1B11BOMA1 Datasheet (Total Pages: 10, Size: 583.63 KB)
PDFDF23MR12W1M1B11BOMA1 Datasheet Cover
DF23MR12W1M1B11BOMA1 Datasheet Page 2 DF23MR12W1M1B11BOMA1 Datasheet Page 3 DF23MR12W1M1B11BOMA1 Datasheet Page 4 DF23MR12W1M1B11BOMA1 Datasheet Page 5 DF23MR12W1M1B11BOMA1 Datasheet Page 6 DF23MR12W1M1B11BOMA1 Datasheet Page 7 DF23MR12W1M1B11BOMA1 Datasheet Page 8 DF23MR12W1M1B11BOMA1 Datasheet Page 9 DF23MR12W1M1B11BOMA1 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DF23MR12W1M1B11BOMA1 Datasheet
  • where to find DF23MR12W1M1B11BOMA1
  • Infineon Technologies

  • Infineon Technologies DF23MR12W1M1B11BOMA1
  • DF23MR12W1M1B11BOMA1 PDF Datasheet
  • DF23MR12W1M1B11BOMA1 Stock

  • DF23MR12W1M1B11BOMA1 Pinout
  • Datasheet DF23MR12W1M1B11BOMA1
  • DF23MR12W1M1B11BOMA1 Supplier

  • Infineon Technologies Distributor
  • DF23MR12W1M1B11BOMA1 Price
  • DF23MR12W1M1B11BOMA1 Distributor

DF23MR12W1M1B11BOMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolSiC™+
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C25A
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

The Products You May Be Interested In

BSS138BKSH

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

320mA (Ta)

Rds On (Max) @ Id, Vgs

1.6Ohm @ 320mA, 10V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

56pF @ 10V

Power - Max

445mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

6-TSSOP

ALD110904SAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Standard

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

500Ohm @ 4.4V

Vgs(th) (Max) @ Id

420mV @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

EPC2101

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9.5A, 38A

Rds On (Max) @ Id, Vgs

11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V

Vgs(th) (Max) @ Id

2.5V @ 3mA, 2.5V @ 12mA

Gate Charge (Qg) (Max) @ Vgs

2.7nC @ 5V, 12nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 30V, 1200pF @ 30V

Power - Max

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

APTMC170AM60CT1AG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N Channel (Phase Leg)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1700V (1.7kV)

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Rds On (Max) @ Id, Vgs

60mOhm @ 50A, 20V

Vgs(th) (Max) @ Id

2.3V @ 2.5mA (Typ)

Gate Charge (Qg) (Max) @ Vgs

190nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

3080pF @ 1000V

Power - Max

350W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1

SI7501DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.4A, 4.5A

Rds On (Max) @ Id, Vgs

35mOhm @ 7.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.6W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual

Recently Sold

APXK160ARA101MF61G

APXK160ARA101MF61G

United Chemi-Con

CAP ALUM POLY 100UF 20% 16V SMD

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

TAJE477K010RNJ

TAJE477K010RNJ

CAP TANT 470UF 10% 10V 2917

SF-1206F700-2

SF-1206F700-2

Bourns

FUSE BOARD MOUNT 7A 24VDC 1206

4608X-101-332LF

4608X-101-332LF

Bourns

RES ARRAY 7 RES 3.3K OHM 8SIP

DLW5BTN101SQ2L

DLW5BTN101SQ2L

Murata

CMC 6A 2LN 100 OHM SMD

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

M74HC390B1R

M74HC390B1R

STMicroelectronics

IC DECADE COUNTER DUAL 16-DIP

MAX3095ESE

MAX3095ESE

Maxim Integrated

IC RECEIVER 0/4 16SO

MCP42050-E/SL

MCP42050-E/SL

Microchip Technology

IC DGTL POT 50KOHM 256TAP 14SOIC

NC7SZ373P6X

NC7SZ373P6X

ON Semiconductor

IC LATCH UHS D 3-STATE SC70-6

NIS5135MN1TXG

NIS5135MN1TXG

ON Semiconductor

IC ELECTRONIC FUSE 10DFN